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CHINA SEMICONDUCTOR CORPORATION
Spec. No. Rev.
PS-ND-08090402 A
PRODUCT SPECIFICATION
Model No CSM-88261VM9
Descriptions:
2.3 Inch 8X8 Dot-Matrix Display Dot Pitch 7.62mm CSM-88261: Column Cathode, Row Anode Emitting Color: Super Bright Orange & Super Bright Green
CUSTOMER APPROVED SIGNATURES
APPROVED BY
CHECKED BY
PREPARED BY
CHINA SEMICONDUCTOR CORPORATION Address:2FL. NO.909,Chung-Cheng Road, Chung-Ho City Taipei Hsien,Taiwan. Tel:886-2-2223-9696 Fax:886-2-2223-9377
OPTO PLUS TECHNOLOGIES CO.,LTD Address:696 Shun jiang Rd.,Ji Shan St.Shaoxing, ZheJiang,China Tel:86-0575-88623888 Fax:86-0575-88623112
http://www.csctw.com.tw
CHINA SEMICONDUCTOR CORPORATION Model No CSM-88261VM9
Spec. No. Rev.
PS-ND-08090402 A
Features 1. 2.3 inch (58.34mm) Matrix height. 2. Case mold type. 3. RoHS compliant. 4. Low power consumption. 5. Easy mounting on P.C. board or socket.
Device Selection Guide -
Part No.
CSM-88261VM9 Package Dimensions -
Material
AlGaInP AlGaInP
Chip Emitted Color
Super Bright Orange Super Bright Green
Column Cathode
Row Anode
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CHINA SEMICONDUCTOR CORPORATION Model No CSM-88261VM9
Spec. No. Rev.
PS-ND-08090402 A
Internal Circuit Diagrams -
Absolute Maximum Rating Super Bright Orange
Parameter
Power Dissipation Per Dice Continuous Forward Current Per Dice Peak Current Per Dice(duty cycle 1/10, 1kHz) Derating Linear From 25 Reverse Voltage Per Dice Operating Temp. Storage Temp. Per Dice
(Ta=25 ) Symbol PAD IAF IPF VR Topr Tstg Rating 70 25 90 0.33 5 -35 ~ +85 -35 ~ +85 Unit mW mA mA mA/ V
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
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CHINA SEMICONDUCTOR CORPORATION Model No CSM-88261VM9 Super Bright Green
Parameter
Power Dissipation Per Dice Continuous Forward Current Per Dice Peak Current Per Dice(duty cycle 1/10, 1kHz) Derating Linear From 25 Reverse Voltage Per Dice Operating Temp. Storage Temp. Per Dice
Spec. No. Rev.
PS-ND-08090402 A
(Ta=25 ) Symbol PAD IAF IPF VR Topr Tstg Rating 70 25 90 0.33 5 -35 ~ +85 -35 ~ +85 Unit mW mA mA mA/ V
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
Electro-optical Characteristics Super Bright Orange
Parameter
Forward Voltage Per Dot Luminous Intensity Per Dot Peak Emission Wavelength Dominant Wavelength Spectrum Radiation Bandwidth Reverse Current Luminous Intensity Matching Ratio
(Ta=25 ) Symbol VF Iv Min. Typ. 2.1 40 632 624 20 Max. 2.8 100 2:1 Unit V mcd nm nm nm A
.
Condition
IF=20mA IF=10mA IF=20mA IF=20mA IF=20mA VR=5V Ip=80mA 1/16Duty
Od
JS
q
IV-m
Super Bright Green
Parameter
Forward Voltage Per Dot Luminous Intensity Per Dot Peak Emission Wavelength Dominant Wavelength Spectrum Radiation Bandwidth Reverse Current Luminous Intensity Matching Ratio
(Ta=25 ) Symbol VF Iv Min. Typ. 2.1 18 570 572 20 Max. 2.8 100 2:1 Unit V mcd nm nm nm A
.
Condition
IF=20mA IF=10mA IF=20mA IF=20mA IF=20mA VR=5V Ip=80mA 1/16Duty
Od
JS
q
IV-m
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CHINA SEMICONDUCTOR CORPORATION Model No CSM-88261VM9
Spec. No. Rev.
PS-ND-08090402 A
Typical Electrical / Optical Charateristics Curves -Super Bright Orange
(Ta = 25 Unless Otherwise Noted)
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CHINA SEMICONDUCTOR CORPORATION Model No CSM-88261VM9
Spec. No. Rev.
PS-ND-08090402 A
Super Bright Green
(Ta = 25 Unless Otherwise Noted)
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Spec. No. Rev.
PS-ND-08090402 A
Package Dimensions
Note: The specifications are subject to change without notice. Please contact us for updated information. http://www.csctw.com.tw 6/6 Page

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